DE275X2-501N16 데이터 시트보기 (PDF) - IXYS CORPORATION

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DE275X2-501N16

RF Power MOSFET

IXYS CORPORATION 

Directed Energy, Inc.

An IXYS Company

DE275X2-501N16A

RF Power MOSFET

Symbol Test Conditions

RG

Ciss

Coss

Crss

Td(on)

Ton

Td(off)

Toff

Qg(on)

Qgs

Qgd

VGS = 0 V, VDS = 0.8 VDSS(max),

f = 1 MHz

VGS = 15 V, VDS = 0.8 VDSS

ID = 0.5 IDM

RG = 0.2 Ω (External)

VGS = 10 V, VDS = 0.5 VDSS

ID = 0.5 ID25

Characteristic Values

(TJ = 25°C unless otherwise specified)

min.

typ. max.

0.3

Ω

1800

pF

150

pF

45

pF

3

ns

2

ns

4

ns

5

ns

50

nC

20

nC

30

nC

Source-Drain Diode

Characteristic Values

(TJ = 25°C unless otherwise specified)

Symbol

IS

ISM

VSD

Trr

QRM

IRM

Test Conditions

VGS = 0 V

Repetitive; pulse width limited by TJM

IF = IS, VGS = 0 V,

Pulse test, t ≤ 300 µs, duty cycle ≤ 2%

min.

IF = IS, -di/dt = 100A/µs,

VR = 100V

typ. max.

16 A

96 A

1.5 V

200

ns

0.8

µC

6.5

A

(1) These parameters apply to the package, not individual MOSFET devices.

For detailed device mounting and installation instructions, see the “DE-

Series MOSFET Mounting Instructions” technical note on DEI’s web site at

www.directedenergy.com/apptech.htm

Directed Energy, Inc. reserves the right to change limits, test conditions and dimensions.

DEI MOSFETS are covered by one or more of the following U.S. patents:

4,835,592 4,850,072 4,881,106 4,891,686 4,931,844 5,017,508

5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,486,715

5,381,025 5,640,045

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