IRF7807V 데이터 시트보기 (PDF) - International Rectifier
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IRF7807V Datasheet PDF : 8 Pages
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IRF7807V
Electrical Characteristics
Parameter
Drain-Source Breakdown Voltage
Static Drain-Source On-Resistance
Gate Threshold Voltage
Drain-Source Leakage Current
Gate-Source Leakage Current*
Total Gate Charge*
Pre-Vth Gate-Source Charge
Post-Vth Gate-Source Charge
Gate-to-Drain Charge
Switch Charge (Qgs2 + Qgd)
Output Charge*
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Symbol
BVDSS
RDS(on)
VGS(th)
IDSS
IGSS
QG
QGS1
QGS2
QGD
QSW
QOSS
RG
td(on)
tr
td(off)
tf
Min
30
–––
1.0
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
0.9
–––
–––
–––
–––
Typ Max Units
Conditions
––– ––– V VGS = 0V, ID = 250µA
d 17 25 mΩ VGS = 4.5V, ID = 7.0A
––– 3.0 V VDS = VGS, ID = 250µA
––– 100
VDS = 30V, VGS = 0
––– 20 µA VDS = 24V, VGS = 0
––– 100
VDS = 24V, VGS = 0, TJ = 100°C
––– ±100 nA VGS = ± 20V
9.5 14
VGS = 5V, ID = 7.0A
2.3 –––
VDS = 16V
1.0 –––
nC
2.4 –––
3.4 5.2
12 16.8
––– 2.8
VDS = 16V, VGS = 0
Ω
6.3 –––
1.2 –––
11 –––
2.2 –––
VDD = 16V
ns ID = 7A
VGS = 5V, RG = 2Ω
Resistive Load
Source-Drain Ratings and Characteristics
Parameter
Diode Forward Voltage*
Symbol Min Typ Max Units
Conditions
VSD
––– ––– 1.2
d V IS = 7.0A ,VGS = 0V
f Reverse Recovery Charge
f Reverse Recovery Charge
(with Parallel Schottsky)
Qrr
Qrr(s)
––– 64 –––
di/dt = 700A/µs
nC VDS = 16V, VGS = 0V, IS = 7.0A
––– 41 –––
di/dt = 700A/µs , (with 10BQ040)
VDS = 16V, VGS = 0V, IS = 7.0A
Notes:
Repetitive rating; pulse width limited by max. junction temperature.
Pulse width ≤ 400 µs; duty cycle ≤ 2%.
When mounted on 1 inch square copper board
Typ = measured - Qoss
Typical values of RDS(on) measured at VGS = 4.5V, QG, QSW and QOSS
measured at V = 5.0V, I = 7.0A.
GS
F
Rθ is measured at TJ approximately 90°C
* Device are 100% tested to these parameters.
2
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