CS2001 데이터 시트보기 (PDF) - ON Semiconductor
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CS2001 Datasheet PDF : 8 Pages
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CS2001
ELECTRICAL CHARACTERISTICS (continued) (8.0 V ≤ VBAT ≤ 16 V, 8.0 V ≤ VER ≤ 25 V, 1.0 mA ≤ IV(OUT) ≤ 100 mA,
TTEST = –40°C to 125°C; unless otherwise specified.)
Characteristic
Test Conditions
Min
Typ
Max
Unit
RESETB OUTPUT
High Threshold
Low Threshold
Hysteresis
VBAT = 0 V
VOUT Increasing
VOUT Decreasing
–
4.525
4.75
4.85
V
4.5
4.65
4.825
V
25
100
200
mV
Output Low Voltage
Pull–Up Resistor
VOUT = 1.0 V, IRESETB = 100 µA
IRESETB = 1.0 mA, VOUT = 4.5 V
RESETB = 1.0 V
–
–
0.5
V
–
–
0.5
V
25
50
100
kΩ
SWSD Input
High Threshold
Low Threshold
Input Impedance
VBAT = 16 V, VER = 25 V, IV(OUT) = –1.0 mA
–
–
–
0.7 × VOUT
V
–
0.3 × VOUT
–
–
V
Referenced to Ground
10
20
40
kΩ
NERD OUTPUT
VER Detection Voltage
VBAT = 16 V, IV(OUT) = –1.0 mA, CNERD = 0.47 mF
–
1.5
–
6.5
V
Output Low Voltage
Pull–Up Current
INERD = 1.0 mA, VOUT = 4.5 V
NERD = 0.5 V
–
–
0.5
V
30
40
50
µA
Power On Delay
–
6.25
8.5
11
ms
Clamping Voltage (Low)
VER Present
1.0
1.25
1.5
V
Clamping Voltage (High)
VER Not Present
3.5
3.75
4.0
V
General
VER Load Current
VER = 25 V, VBAT = 16 V, IV(OUT) = –100 mA
T = –40°C
–
T = 25°C
–
T = 125°C
–
–
5.0
mA
–
5.0
mA
–
4.0
mA
Thermal Shutdown
(Guaranteed by Design)
160
–
210
°C
PACKAGE PIN #
SO–20L
1
2
3
4
5
6
7
8
9
10
11
12
PACKAGE PIN DESCRIPTION
PIN SYMBOL
VER
VBAT
VFB
GND1
GND2
GND3
GND4
VSW
SWSD
COMP
CPUMP
IBIAS
Energy reserve input.
FUNCTION
Battery input.
Charge PUMP control voltage input.
Ground.
Ground.
Ground.
Ground.
Charge PUMP switch collector.
Charge PUMP shutdown input.
Charge PUMP compensation pin.
Charge PUMP timing cap input.
Reference current resistor pin.
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