CR6CM-12A 데이터 시트보기 (PDF) - Renesas Electronics
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CR6CM-12A Datasheet PDF : 8 Pages
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CR6CM-12A
Parameter
RMS on-state current
Average on-state current
Surge on-state current
I2t for fusing
Peak gate power dissipation
Average gate power dissipation
Peak gate forward voltage
Peak gate reverse voltage
Peak gate forward current
Junction temperature
Storage temperature
Mass
Symbol
IT (RMS)
IT (AV)
ITSM
I2t
PGM
PG (AV)
VFGM
VRGM
IFGM
Tj
Tstg
—
Ratings
9.4
6
90
41
5
0.5
6
10
2
– 40 to +125
– 40 to +125
2.1
Preliminary
Unit
Conditions
A
A Commercial frequency, sine half wave
180° conduction, Tc = 96°CNote1
A 50Hz sine half wave 1 full cycle,
peak value, non-repetitive
A2s Value corresponding to 1 cycle of half
wave 50Hz, surge on-state current
W
W
V
V
A
°C
°C
g
Typical value
Electrical Characteristics
Parameter
Symbol Min.
Typ.
Max.
Unit
Test conditions
Repetitive peak reverse current
IRRM
—
—
2.0
mA Tj = 125°C, VRRM applied
Repetitive peak off-state current
IDRM
—
—
2.0
mA Tj = 125°C, VDRM applied
On-state voltage
VTM
—
—
1.7
V
Tc = 25°C, ITM = 20 A,
instantaneous value
Gate trigger voltage
VGT
—
—
1.0
V
Tj = 25°C, VD = 6 V, IT = 1 A
Gate non-trigger voltage
VGD
0.2
—
—
V
Tj = 125°C, VD = 1/2 VDRM
Gate trigger current
IGT
—
—
10
mA Tj = 25°C, VD = 6 V, IT = 1 A
Holding current
Thermal resistance
IH
—
Rth (j-c)
—
15
—
mA Tj = 25°C, VD = 12 V
—
2.5
°C/W Junction to caseNote1 Note2
Notes: 1. Case temperature is measured at anode tab 1.5 mm away from the molded case.
2. The contact thermal resistance Rth (c-f) in case of greasing is 1.0°C/W.
R07DS1033EJ0300 Rev.3.00
Jul 30, 2013
Page 2 of 7
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