CR12AM 데이터 시트보기 (PDF) - MITSUBISHI ELECTRIC
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CR12AM Datasheet PDF : 6 Pages
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MITSUBISHI SEMICONDUCTOR 〈THYRISTOR〉
CR12AM
MEDIUM POWER USE
NON-INSULATED TYPE, GLASS PASSIVATION TYPE
ELECTRICAL CHARACTERISTICS
Symbol
Parameter
Test conditions
IRRM
Repetitive peak reverse current
Tj=125°C, VRRM applied
IDRM
Repetitive peak off-state current
Tj=125°C, VDRM applied
VTM
On-state voltage
Tc=25°C, ITM=40A,
VGT
Gate trigger voltage
Tj=25°C, VD=6V, IT=1A
VGD
Gate non-trigger voltage
Tj=125°C, VD=1/2VDRM
IGT
Gate trigger current
Tj=25°C, VD=6V, IT=1A
IH
Rth (j-c)
Holding current
Thermal resistance
Tj=25°C, VD=12V
Junction to case V1
V1. The contact thermal resistance Rth (c-f) is 1.0°C/W with greased.
Limits
Min. Typ. Max.
—
—
2.0
—
—
2.0
—
—
1.6
—
—
1.5
0.2
—
—
—
—
30
—
15
—
—
—
1.2
Unit
mA
mA
V
V
V
mA
mA
°C/W
PERFORMANCE CURVES
MAXIMUM ON-STATE CHARACTERISTICS
103
7 Tc = 25°C
5
3
2
102
7
5
3
2
101
7
5
3
2
100
0.6 1.0 1.4 1.8 2.2 2.6 3.0 3.4 3.8
ON-STATE VOLTAGE (V)
RATED SURGE ON-STATE CURRENT
400
360
320
280
240
200
160
120
80
40
0
100 2 3 4 5 7 101 2 3 4 5 7 102
CONDUCTION TIME
(CYCLES AT 60Hz)
Feb.1999
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