CM150E3U-12H(2009) 데이터 시트보기 (PDF) - MITSUBISHI ELECTRIC

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CM150E3U-12H
(Rev.:2009)

MITSUBISHI IGBT MODULES HIGH POWER SWITCHING USE INSULATED TYPE

MITSUBISHI ELECTRIC  

MITSUBISHI IGBT MODULES

CM150E3U-12H

HIGH POWER SWITCHING USE

INSULATED TYPE

MAXIMUM RATINGS (Tj = 25°C, unless otherwise specified)

Symbol

VCES

VGES

IC

ICM

IE (Note 2)

IEM (Note 2)

PC (Note 3)

Tj

Tstg

Viso

—

—

Item

Collector-emitter voltage

Gate-emitter voltage

Collector current

Emitter current

Maximum collector dissipation

Junction temperature

Storage temperature

Isolation voltage

Mounting torque

Weight

Conditions

VGE = 0V

VCE = 0V

TC = 25°C

Pulse

(Note 1)

TC = 25°C

Pulse

(Note 1)

TC = 25°C

—

—

Charged part to base plate, f = 60Hz, AC 1 minute

Main terminals M5 screw

Mounting M6 screw

Typical value

Ratings

600

±20

150

300

150

300

600

–40 ~ +150

–40 ~ +125

2500

2.5 ~ 3.5

3.5 ~ 4.5

310

Unit

V

V

A

A

A

A

W

°C

°C

Vrms

N·m

N·m

g

ELECTRICAL CHARACTERISTICS (Tj = 25°C, unless otherwise specified)

Symbol

Item

Test Conditions

Limits

Min

Typ

ICES

Collector cutoff current

VCE = VCES, VGE = 0V

—

—

VGE(th)

Gate-emitter

threshold voltage

IC = 15mA, VCE = 10V

4.5

6

IGES

Gate-leakage current

±VGE = VGES, VCE = 0V

—

—

VCE(sat)

Collector-emitter

saturation voltage

IC = 150A, VGE = 15V

Tj = 25°C

—

2.4

(Note 4) Tj = 125°C

—

2.7

Cies

Coes

Cres

Input capacitance

Output capacitance

Reverse transfer capacitance

VCE = 10V

VGE = 0V

—

—

—

—

—

—

QG

Total gate charge

VCC = 300V, IC = 150A, VGE = 15V

—

300

td (on)

Turn-on delay time

VCC = 300V, IC = 150A

—

—

tr

Turn-on rise time

VGE = ±15V

—

—

td (off)

Turn-off delay time

RG = 4.2Ω

—

—

tf

Turn-off fall time

Resistive load

—

—

VEC (Note 2) Emitter-collector voltage

IE = 150A, VGE = 0V

—

—

trr (Note 2)

Qrr (Note 2)

Rth(j-c)Q

Rth(j-c)R

VFM

trr

Qrr

Rth(j-c)

Reverse recovery time

Reverse recovery charge

Thermal resistance (Note 5)

Forward voltage

Reverse recovery time

Reverse recovery charge

Thermal resistance (Note 5)

IE = 150A

die / dt = –300A / µs

Junction to case, IGBT part

Junction to case, FWDi part

IF = 150A, Clamp diode part

IF = 150A

die / dt = –300A / µs, Clamp diode part

Junction to case, Clamp diode part

—

—

—

0.36

—

—

—

—

—

—

—

—

—

0.36

—

—

Rth(c-f)

Contact thermal resistance

Case to heat sink, conductive grease applied

—

0.07

(Per 1/2 module)

(Note 6)

Note 1. Pulse width and repetition rate should be such that the device junction temperature (Tj) does not exceed Tjmax rating.

2. IE, VEC, trr, Qrr & die/dt represent characteristics of the anti-parallel, emitter-collector free-wheel diode.

3. Junction temperature (Tj) should not increase beyond 150°C.

4. Pulse width and repetition rate should be such as to cause negligible temperature rise.

5. Case temperature (TC) measured point is shown in page OUTLINE DRAWING.

6. Typical value is measured by using thermally conductive grease of λ = 0.9[W/(m • K)].

Unit

Max

1 mA

7.5

V

0.5 µA

3.0

—

V

13.2 nF

7.2 nF

2 nF

—

nC

100 ns

350 ns

300 ns

300 ns

2.6

V

160 ns

—

µC

0.21 K/W

0.47 K/W

2.6

V

160 ns

—

µC

0.47 K/W

—

K/W

Feb. 2009

2

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