CM1200HC-66H 데이터 시트보기 (PDF) - Mitsumi

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CM1200HC-66H

HIGH POWER SWITCHING USE INSULATED TYPE

Mitsumi 

MITSUBISHI HVIGBT MODULES

CM1200HC-66H

HIGH POWER SWITCHING USE

3rd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules

INSULATED TYPE

CM1200HC-66H

q IC ................................................................ 1200A

q VCES ....................................................... 3300V

q Insulated Type

q 1-element in a Pack

q AISiC Baseplate

APPLICATION

Traction drives, High Reliability Converters / Inverters, DC choppers

OUTLINE DRAWING & CIRCUIT DIAGRAM

Dimensions in mm

57±0.1

190 ±0.5

171±0.1

57±0.1

57±0.1

6 - M8 NUTS

C

C

C

C

C

C

C

G

E

E

E

E

CM

E

E

CEG

3 - M4 NUTS

screwing depth

min. 7.7

79.4 ±0.3

20.25 ±0.2

41.25 ±0.3

61.5 ±0.3

61.5 ±0.3

13 ±0.2

E

CIRCUIT DIAGRAM

8 - φ7±0.1 MOUNTING HOLES

screwing depth

min. 16.5

5.2 ±0.2

40 ±0.3

15 ±0.2

LABEL

HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules

Jul. 2005

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