CM1200HA-66H 데이터 시트보기 (PDF) - Mitsumi
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CM1200HA-66H Datasheet PDF : 4 Pages
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HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
MITSUBISHI HVIGBT MODULES
CM1200HA-66H
HIGH POWER SWITCHING USE
INSULATED TYPE
HALF-BRIDGE
SWITCHING TIME CHARACTERISTICS
(TYPICAL)
5
3
2
td(off)
100
td(on)
7
5
tr
3
tf
2
10–1
7
5
5
7 102
VCC = 1650V, VGE = ±15V
RG = 2.5Ω, Tj = 125°C
Inductive load
2 3 5 7 103 2 3 5
COLLECTOR CURRENT IC (A)
HALF-BRIDGE
SWITCHING ENERGY CHARACTERISTICS
(TYPICAL)
2.4
VCC = 1650V, VGE = ±15V,
RG = 2.5Ω, Tj = 125°C,
2.0 Inductive load
Eon
1.6
1.2
Eoff
0.8
Erec
0.4
0
0
400
800 1200 1600
CURRENT (A)
REVERSE RECOVERY CHARACTERISTICS
OF FREE-WHEEL DIODE
(TYPICAL)
5
5
VCC = 1650V, Tj = 125°C
3 Inductive load
3
2 VGE = ±15V, RG = 2.5Ω
2
100
trr
103
7
Irr
7
5
5
3
3
2
2
10–1
7
5
5
7 102
23
5 7 103
23
102
7
5
5
EMITTER CURRENT IE (A)
HALF-BRIDGE
SWITCHING ENERGY CHARACTERISTICS
(TYPICAL)
4
Eon
3
2
Eoff
1
VCC = 1650V, IC = 1200A,
VGE = ±15V, Tj = 125°C,
Inductive load
0
0
5
10
15
20
GATE RESISTANCE (Ω)
GATE CHARGE CHARACTERISTICS
(TYPICAL)
20
VCC = 1650V
IC = 1200A
16
12
8
4
0
0 2000 4000 6000 8000 10000
GATE CHARGE QG (nC)
TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
101
7 Single Pulse
5 TC = 25°C
3 Rth(j – c)Q = 0.012K/ W
2 Rth(j – c)R = 0.024K/ W
100
7
5
3
2
10–1
7
5
3
2
10–2
10–3 2 3 5 7 10–2 2 3 5 7 10–1 2 3 5 7 100
TIME (s)
Mar. 2003
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