CM1200HA-66H(1998) 데이터 시트보기 (PDF) - Mitsumi

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CM1200HA-66H
(Rev.:1998)

HIGH POWER SWITCHING USE INSULATED TYPE

Mitsumi 

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MITSUBISHI HVIGBT MODULES

CM1200HA-66H

HIGH POWER SWITCHING USE

HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules

INSULATED TYPE

CM1200HA-66H

q IC ................................................................ 1200A

q VCES ....................................................... 3300V

q Insulated Type

q 1-element in a pack

APPLICATION

Inverters, Converters, DC choppers, Induction heating, DC to DC converters.

OUTLINE DRAWING & CIRCUIT DIAGRAM

Dimensions in mm

57±0.25

190

171

57±0.25

57±0.25

6 - M8 NUTS

C

C

CM

E

E

C

EG

3 - M4 NUTS

79.4

20.25

41.25

E

C

E

C

G

C

E

CIRCUIT DIAGRAM

8 - φ 7MOUNTING HOLES

61.5

61.5

13

15

40

5.2

LABEL

HVIGBT MODULES (High Voltage Insulated Gate Bipolar Transistor Modules)

Aug.1998

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