C2611-T0-92 데이터 시트보기 (PDF) - Jiangsu Changjiang Electronics Technology Co., Ltd
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C2611-T0-92 Datasheet PDF : 3 Pages
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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD
TO-92 Plastic-Encapsulate Transistors
C2611
TRANSISTOR（ NPN ）
TO— 92
FEATURES
Power dissipation
PCM : 0.75 W（Tamb=25℃）
Collector current
ICM : 0.2
A
Collector-base voltage
V(BR)CBO : 600 V
Operating and storage junction temperature range
TJ，Tstg: -55℃ to +150℃
ELECTRICAL CHARACTERISTICS（Tamb=25℃ unless
1. BASE
2.COLLECTOR
3. EMITTER
123
otherwise specified）
Parameter
Symbol
Test conditions
MIN
TYP
MAX UNIT
Collector-base breakdown voltage
V(BR)CBO
Ic= 100μA ，IE=0
600
V
Collector-emitter breakdown voltage V(BR)CEO IC= 1 mA , IB=0
400
Emitter-base breakdown voltage
V(BR)EBO
IE= 100 μA，IC=0
7
Collector cut-off current
ICBO
VCB= 600 V , IE=0
Collector cut-off current
ICEO
VCE= 400 V , IB=0
Emitter cut-off current
IEBO
VEB= 7 V , IC=0
V
V
100 μA
200 μA
100 μA
DC current gain
hFE（1）
VCE= 20 V, IC= 20m A
10
40
hFE（2）
VCE= 10V, IC= 0.25 m A
5
Collector-emitter saturation voltage
VCE(sat)
IC= 50mA, IB= 10 m A
0.5
V
Base-emitter saturation voltage
VBE(sat)
IC= 50 mA, IB= 10m A
1.2
V
Transition frequency
fT
Fall time
tf
Storage time
tS
CLASSIFICATION OF hFE(1)
Rank
Range
10-15
15-20
VCE= 20 V, IC=20mA
8
f = 1MHz
IC=50mA,
IB1=-IB2=5mA,
VCC=45V
20-25
25-30
30-35
MHz
0.3 μs
1.5 μs
35-40
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