C1815 데이터 시트보기 (PDF) - Rectron Semiconductor
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C1815
Rectron Semiconductor
C1815 Datasheet PDF : 2 Pages
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C1815
SOT-23 BIPOLAR TRANSISTORS
TRANSISTOR(NPN)
FEATURES
* Power dissipation
PCM :
0.2
W (Tamb=25OC)
* Collector current
ICM :
0.15
mA
* Collector-base voltage
V(BR)CBO : 60
V
* Operating and storage junction temperature range
TJ,Tstg: -55OC to +150OC
MECHANICAL DATA
* Case: Molded plastic
* Epoxy: UL 94V-O rate flame retardant
* Lead: MIL-STD-202E method 208C guaranteed
* Mounting position: Any
* Weight: 0.008 gram
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25OC ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
ELECTRICAL CHARACTERISTICS ( @ TA = 25OC unless otherwise noted )
CHARACTERISTICS
Collector-base breakdown voltage (IC= 100mA, IE=0)
Collector-emitter breakdown voltage (IC= 0.1mA, IB=0)
Collector cut-off current (VCB= 60V, IE=0)
Collector cut-off current (VCB= 50V, IB=0)
Emitter cut-off current (VEB= 5V, IC=0)
DC current gain (VCE= 6V, IC= 2mA)
Collector-emitter saturation voltage (IC= 100mA, IB= 10mA)
Base-emitter voltage (IC= 100mA, IB= 10mA)
Transition frequency (VCE= 10V, IC= 1mA, f= 30MHZ)
SYMBOL
V(BR)CBO
V(BR)CEO
ICBO
ICEO
IEBO
hFE(1)
VCE(sat)
VBE(sat)
fT
CLASSIFICATION OF hFE(1)
RANK
Range
DEVICE MARKING
Note : "Fully ROHS compliant", "100% Sn plating (Pb-free)".
SOT-23
COLLECTOR
3
BASE 1
2
EMITTER
0.006(0.15)
0.003(0.08)
0.055(1.40)
0.047(1.20)
0.020(0.50)
0.012(0.30)
0.043(1.10)
0.035(0.90)
0.004(0.10)
0.000(0.00)
0.020(0.50)
0.012(0.30)
0.100(2.55)
0.089(2.25)
1
0.019(2.00)
0.071(1.80)
3
2
0.118(3.00)
0.110(2.80)
Dimensions in inches and (millimeters)
MIN
60
50
-
-
-
130
-
-
80
L
130 - 200
TYP
-
-
-
-
-
-
-
-
-
HF
MAX
-
-
0.1
0.1
0.1
400
0.25
1
-
H
200 - 400
UNITS
V
V
mA
mA
mA
-
V
V
MHz
2007-3
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