BUL52B 데이터 시트보기 (PDF) - Quanzhou Jinmei Electronic
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BUL52B Datasheet PDF : 3 Pages
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Product Specification
Silicon Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
VCEO(SUS) Collector-emitter sustaining voltage
V(BR)CBO Collector-base breakdown voltage
V(BR)EBO Emitter-base breakdwon voltage
VCEsat-1 Collector-emitter saturation voltage
VCEsat-2 Collector-emitter saturation voltage
VCEsat-3 Collector-emitter saturation voltage
VCEsat-4 Collector-emitter saturation voltage
VBEsat-1 Emitter-base saturation voltage
VBEsat-2 Emitter-base saturation voltage
VBEsat-3 Emitter-base saturation voltage
ICBO
Collector cut-off current
ICEO
Collector cut-off current
IEBO
Emitter cut-off current
hFE-1
DC current gain
hFE-2
DC current gain
hFE-3
DC current gain
fT
Transition frequency
Cob
Output capacitance
CONDITIONS
IC=10mA ;IB=0
IC=1mA ;IE=0
IE=1mA ;IC=0
IC=0.1A IB=20mA
IC=1A IB=0.2A
IC=2A IB=0.4A
IC=3A IB=0.6A
IC=1A IB=0.2A
IC=2A IB=0.4A
IC=3A IB=0.6A
VCB=800V IE=0
TC=125℃
VCE=400V IB=0
VEB=9V IC=0
TC=125℃
IC=0.1A ; VCE=5V
IC=1A ; VCE=5V
IC=3A ; VCE=1V
TC=125℃
IC=0.2A ; VCE=4V
VCB=20V ;f=1MHz
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BUL52B
MIN
TYP.
MAX UNIT
400
V
800
V
10
V
0.1
V
0.2
V
0.3
V
0.5
V
1.0
V
1.1
V
1.2
V
10
100
μA
100
μA
10
100
μA
20
15
45
10
5
20
MHz
40
pF
JMnic
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