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BU406

Silicon NPN Power Transistor

Inchange Semiconductor 

INCHANGE Semiconductor

isc Silicon NPN Power Transistor

isc Product Specification

BU406

ELECTRICAL CHARACTERISTICS

TC=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

MIN TYP. MAX UNIT

VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 100mA ;IB= 0

200

V

VCE(sat) Collector-Emitter Saturation Voltage IC= 5A; IB=B 0.5A

1.0 V

VBE(sat) Base-Emitter Saturation Voltage

ICES

Collector Cutoff Current

IEBO

Emitter Cutoff Current

IC= 5A; IB=B 0.5A

VCE= 400V; VBE= 0

VCE=250V; VBE= 0

VCE=250V; VBE= 0;TC= 150℃

VEB= 6V; IC=0

1.2 V

5.0

0.1 mA

1.0

1.0 mA

fT

Current-Gain—Bandwidth Product IC= 0.5A ; VCE= 10V, ftest= 20MHz

10

MHz

COB

Output Capacitance

tf

Fall Time

IE= 0; VCB= 10V; ftest= 1.0MHz

IC= 5A; IB1= -IB2= 0.5A, L= 150μH

VCC= 40V

80

pF

0.75 μs

isc Website：www.iscsemi.cn

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