BT258 데이터 시트보기 (PDF) - Philips Electronics

부품명

상세내역

일치하는 목록

BT258

Thyristors logic level

Philips Electronics 

Philips Semiconductors

Thyristors

logic level

Product specification

BT258 series

GENERAL DESCRIPTION

Glass passivated, sensitive gate

thyristors in a plastic envelope,

intended for use in general purpose

switching and phase control

applications. These devices are

intended to be interfaced directly to

microcontrollers, logic integrated

circuits and other low power gate

trigger circuits.

QUICK REFERENCE DATA

SYMBOL PARAMETER

MAX. MAX. MAX. UNIT

VDRM,

VRRM

IT(AV)

IT(RMS)

ITSM

BT258- 500R 600R 800R

Repetitive peak off-state

500 600 800 V

voltages

Average on-state current

5

5

5A

RMS on-state current

8

8

8A

Non-repetitive peak on-state 75 75 75 A

current

PINNING - TO220AB

PIN

DESCRIPTION

1 cathode

2 anode

3 gate

tab anode

PIN CONFIGURATION

tab

1 23

SYMBOL

a

k

g

LIMITING VALUES

Limiting values in accordance with the Absolute Maximum System (IEC 134).

SYMBOL PARAMETER

CONDITIONS

MIN.

VDRM, VRRM Repetitive peak off-state

-

voltages

IT(AV)

IT(RMS)

ITSM

I2t

dIT/dt

IGM

VGM

VRGM

PGM

PG(AV)

Tstg

Tj

Average on-state current half sine wave; Tmb ≤ 111 ˚C

-

RMS on-state current

all conduction angles

-

Non-repetitive peak

on-state current

half sine wave; Tj = 25 ˚C prior to

surge

t = 10 ms

-

t = 8.3 ms

-

I2t for fusing

t = 10 ms

-

Repetitive rate of rise of ITM = 10 A; IG = 50 mA;

-

on-state current after

dIG/dt = 50 mA/µs

triggering

Peak gate current

-

Peak gate voltage

-

Peak reverse gate voltage

-

Peak gate power

-

Average gate power

over any 20 ms period

-

Storage temperature

-40

Operating junction

-

temperature

MAX.

-500R -600R -800R

5001 6001 800

5

8

75

82

28

50

2

5

5

5

0.5

150

1252

UNIT

V

A

A

A

A

A2s

A/µs

A

V

V

W

W

˚C

˚C

1 Although not recommended, off-state voltages up to 800V may be applied without damage, but the thyristor may

switch to the on-state. The rate of rise of current should not exceed 15 A/µs.

2 Note: Operation above 110˚C may require the use of a gate to cathode resistor of 1kΩ or less.

October 1997

1

Rev 1.200

Share Link: