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BSW67A

SILICON NPN PLANAR TRANSISTOR

Semelab - > TT Electronics plc  

BSW67A

ELECTRICAL CHARACTERISTICS (Tcase = 25°C unless otherwise stated)

Parameter

Test Conditions

Min.

V(BR)CEO* Collector – Emitter Breakdown Voltage IC = 10mA IB = 0

120

V(BR)CBO* Collector – Base Breakdown Voltage IC = 100μA IE = 0

120

V(BR)EBO* Emitter – Base Breakdown Voltage

IE = 100μA IC = 0

6

VCB = 60V IE = 0

ICBO

Collector Cut-off Current

VCB = 60V IE = 0

Tamb = 150°C

IC = 0.1A

IB = 0.01A

VCE(sat)* Collector – Emitter Saturation Voltage IC = 0.5A

IB = 0.05A

IC = 1.0A

IB = 0.15A

IC = 0.1A

IB = 0.01A

VBE(sat)* Base – Emitter Saturation Voltage

IC = 0.5A

IB = 0.05A

IC = 1.0A

IB = 0.15A

IC = 0.1A

VCE = 5V

40

hFE*

DC Current Gain

IC = 0.5A

VCE = 5V

30

IC = 1.0A

VCE = 5V

15

t* Pulse test tp = 300μs , δ ≤ 1.5%

DYNAMIC CHARACTERISTICS (Tcase = 25°C unless otherwise stated)

Parameter

Test Conditions

Min.

fT

Cobo

Cibo

ton

toff

Transition Frequency

Output Capacitance

Input Capacitance

Turn–On Time

Turn–Off Time

IC = 100mA VCE = 20V f = 35MHz

50

VCB = 10V IE = 0

f = 1.0MHz

VEB = 0

IE = 0

f = 1.0MHz

IC = 0.5A VCC = 20V

IB1 =- IB2 = 0.05A

Typ.

Typ.

0.3

1.0

Max.

0.1

50

Unit

V

V

V

μA

0.15

0.5

V

1.0

0.9

1.1

V

1.2

—

Max.

20

300

Unit

MHz

pF

pF

μs

Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed

to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use.

Semelab encourages customers to verify that datasheets are current before placing orders.

Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.

E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk

Document Number 7881

Issue 1

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