SBSS84LT1(2012) 데이터 시트보기 (PDF) - ON Semiconductor
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SBSS84LT1 Datasheet PDF : 4 Pages
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BSS84LT1, SBSS84LT1
Power MOSFET
Single P-Channel SOT-23
-50 V, 10 W
• SOT−23 Surface Mount Package Saves Board Space
• AEC Q101 Qualified − SBSS84LT1
• These Devices are Pb−Free and are RoHS Compliant
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating
Symbol Value Unit
Drain−to−Source Voltage
Gate−to−Source Voltage − Continuous
Drain Current
Continuous @ TA = 25°C
Pulsed Drain Current (tp ≤ 10 ms)
Total Power Dissipation @ TA = 25°C
Operating and Storage Temperature
Range
VDSS
50
Vdc
VGS
± 20
Vdc
mA
ID
130
IDM
520
PD
225
mW
TJ, Tstg − 55 to
°C
150
Thermal Resistance − Junction−to−Ambient
Maximum Lead Temperature for Soldering
Purposes, for 10 seconds
RqJA
TL
556 °C/W
260
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
© Semiconductor Components Industries, LLC, 2012
1
March, 2012 − Rev. 7
http://onsemi.com
V(BR)DSS
−50 V
RDS(ON) MAX
10 W @ 10 V
P−Channel
3
1
2
3
1
2
SOT−23
CASE 318
STYLE 21
MARKING DIAGRAM & PIN ASSIGNMENT
3
Drain
PD MG
G
1
Gate
2
Source
PD = Specific Device Code
M
= Date Code
G
= Pb−Free Package
(*Note: Microdot may be in either location)
ORDERING INFORMATION
Device
BSS84LT1G
SBSS84LT1G
Package
SOT−23
(Pb−Free)
SOT−23
(Pb−Free)
Shipping†
3000 / Tape & Reel
3000 / Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
Publication Order Number:
BSS84LT1/D
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