BSS138BKW 데이터 시트보기 (PDF) - Philips Electronics
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BSS138BKW Datasheet PDF : 16 Pages
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NXP Semiconductors
BSS138BKW
60 V, 320 mA N-channel Trench MOSFET
5. Limiting values
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
VDS
drain-source voltage
Tj = 25 °C
VGS
gate-source voltage
ID
drain current
VGS = 10 V; Tamb = 25 °C
VGS = 10 V; Tamb = 100 °C
IDM
peak drain current
Tamb = 25 °C; single pulse; tp ≤ 10 µs
Ptot
total power dissipation
Tamb = 25 °C
Tj
junction temperature
Tamb
ambient temperature
Tstg
storage temperature
Source-drain diode
IS
source current
ESD maximum rating
VESD
electrostatic discharge voltage
Tsp = 25 °C
Tamb = 25 °C
HBM
Min
-
-20
[1] -
[1] -
-
[2] -
[1] -
-
-55
-55
-65
[1] -
[3] -
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 1 cm2.
[2] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard footprint.
[3] Measured between all pins.
Max Unit
60 V
20 V
320 mA
210 mA
1.2 A
260 mW
310 mW
830 mW
150 °C
150 °C
150 °C
320 mA
1500 V
120
Pder
(%)
80
001aao121
120
Ider
(%)
80
001aao122
40
40
0
-75
-25
25
75
125
175
Tj (°C)
0
-75
-25
25
75
125
175
Tj (°C)
Fig 1. Normalized total power dissipation as a
function of junction temperature
Fig 2. Normalized continuous drain current as a
function of junction temperature
BSS138BKW
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 12 August 2011
© NXP B.V. 2011. All rights reserved.
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