BSM100GB170DN2 데이터 시트보기 (PDF) - Siemens AG

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BSM100GB170DN2

IGBT Power Module

Siemens AG 

BSM 100 GB 170 DN2

Typ. gate charge

VGE = ƒ(QGate)

parameter: IC puls = 100 A

20

V

VGE 16

14

12

800 V

1200 V

10

8

6

4

2

0

0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 µC 1.7

QGate

Reverse biased safe operating area

ICpuls = f(VCE) , Tj = 150°C

parameter: VGE = 15 V

2.5

Typ. capacitances

C = f (VCE)

parameter: VGE = 0, f = 1 MHz

10 2

nF

C

10 1

Ciss

10 0

Coss

Crss

10 -1

0

5 10 15 20 25 30 V 40

VCE

Short circuit safe operating area

ICsc = f(VCE) , Tj = 150°C

parameter: VGE = ± 15 V, tSC ≤ 10 µs, L < 25 nH

12

ICpuls/IC

1.5

1.0

0.5

ICsc/IC

8

6

4

2

0.0

0

250 500 750 1000 1250 1500 V 2000

VCE

0

0 250 500 750 1000 1250 1500 V 2000

VCE

Semiconductor Group

6

Aug-01-1996

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