BDW58 데이터 시트보기 (PDF) - Inchange Semiconductor
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BDW58 Datasheet PDF : 2 Pages
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INCHANGE Semiconductor
isc Silicon PNP Power Transistors
isc Product Specification
BDW56/58/60
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
BDW56
-45
VCEO(SUS)
Collector-Emitter
Sustaining Voltage
BDW58
IC= -10mA ;IB=B 0
-60
V
BDW60
-80
VCE(sat)
VBE(on)
ICBO
ICBO
IEBO
Collector-Emitter Saturation Voltage IC= -0.5A; IB=B -50mA
Base-Emitter On Voltage
IC= -0.5A ; VCE= -2V
Collector Cutoff Current
VCB= VCBOmax;IE= 0
BDW56
VCB= -30V; IE=0;TJ= 150℃
Collector Cutoff Current BDW58 VCB= -45V; IE=0;TJ= 150℃
BDW60
VCB= -70V; IE=0;TJ= 150℃
Emitter Cutoff Current
VEB= -5V; IC=0
-0.5 V
-1.0 V
-0.1 μA
-10
-10 μA
-10
-10 μA
hFE-1
DC Current Gain
IC= -5mA ; VCE= -2V
25
hFE-2
DC Current Gain
IC= -150mA ; VCE= -2V
40
250
hFE-3
DC Current Gain
IC= -500mA ; VCE= -2V
25
fT
Current-Gain—Bandwidth Product
Switching times
IC= -50mA;VCE= -5V;ftest= 35MHz
75
MHz
td
Delay Time
tr
Rise Time
tstg
Storage Time
tf
Fall Time
IC= 0.15A; IB1= -IB2= 15mA;
VCC= 10.2V
30
ns
40
ns
500
ns
80
ns
isc Website：www.iscsemi.cn
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