BDW57 데이터 시트보기 (PDF) - Inchange Semiconductor
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BDW57 Datasheet PDF : 2 Pages
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INCHANGE Semiconductor
isc Silicon NPN Power Transistors
isc Product Specification
BDW55/57/59
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS)
Collector-Emitter
Sustaining Voltage
BDW55
BDW57
BDW59
IC= 10mA ;IB=B 0
VCE(sat)
VBE(on)
ICBO
ICBO
Collector-Emitter Saturation Voltage IC= 0.5A; IB= 50mA
Base-Emitter On Voltage
IC= 0.5A ; VCE= 2V
Collector Cutoff Current
VCB= VCBOmax;IE= 0
BDW55
VCB= 30V; IE=0;TJ= 150℃
Collector Cutoff Current BDW57 VCB= 45V; IE=0;TJ= 150℃
BDW59
VCB= 70V; IE=0;TJ= 150℃
IEBO
Emitter Cutoff Current
VEB= 5V; IC=0
hFE-1
DC Current Gain
IC= 5mA ; VCE= 2V
hFE-2
DC Current Gain
IC= 150mA ; VCE= 2V
hFE-3
DC Current Gain
IC= 500mA ; VCE= 2V
fT
Current-Gain—Bandwidth Product
Switching times
IC= 50mA ; VCE= 5V;ftest= 35MHz
td
Delay Time
tr
Rise Time
tstg
Storage Time
tf
Fall Time
IC= 0.15A; IB1= -IB2= 15mA;
VCC= 10.2V
MIN TYP. MAX UNIT
45
60
V
80
0.5
V
1.0
V
0.1 μA
10
10 μA
10
10 μA
25
40
250
25
250
MHz
30
ns
30
ns
500
ns
80
ns
isc Website：www.iscsemi.cn
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