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BD907

Silicon NPN Power Transistor

Inchange Semiconductor 

INCHANGE Semiconductor

isc Silicon NPN Power Transistor

isc Product Specification

BD907

ELECTRICAL CHARACTERISTICS

TC=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 50mA ;IB=B 0

VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 5A; IB=B 0.5A

VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 10A; IB= 2.5A

VBE(sat) Base-Emitter Saturation Voltage

IC= 10A; IB= 2.5A

VBE(on) Base-Emitter On Voltage

IC= 5A ; VCE= 4V

ICBO

Collector Cutoff Current

VCB= 60V;IE= 0

ICEO

Collector Cutoff Current

VCE= 30V;IB= 0

IEBO

Emitter Cutoff Current

VEB= 5V; IC= 0

hFE-1

DC Current Gain

IC= 0.5A ; VCE= 4V

hFE-2

DC Current Gain

IC= 5A ; VCE= 4V

hFE-3

DC Current Gain

IC= 10A ; VCE= 4V

fT

Current-Gain—Bandwidth Product IC= 0.5A ; VCE= 4V; ftest= 1.0MHz

MIN MAX UNIT

60

V

1.0

V

3.0

V

2.5

V

1.5

V

0.5

mA

1.0

mA

1.0

mA

40

250

15

150

5

3.0

MHz

isc Website：www.iscsemi.cn

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