BD645 데이터 시트보기 (PDF) - Power Innovations

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BD645

PNP SILICON POWER DARLINGTONS

Power Innovations 

BD646, BD648, BD650, BD652

PNP SILICON POWER DARLINGTONS

MAY 1993 - REVISED MARCH 1997

electrical characteristics at 25°C case temperature (unless otherwise noted)

PARAMETER

TEST CONDITIONS

MIN TYP MAX

BD646

-60

Collector-emitter

V(BR)CEO breakdown voltage

IC = -30 mA IB = 0

(see Note 5)

BD648

BD650

-80

-100

BD652

-120

VCE = -30 V IB = 0

BD646

-0.5

ICEO

Collector-emitter

cut-off current

VCE = -40 V

VCE = -50 V

IB = 0

IB = 0

BD648

-0.5

BD650

-0.5

VCE = -60 V IB = 0

BD652

-0.5

VCB = -60 V IE = 0

BD646

-0.2

VCB = -80 V IE = 0

BD648

-0.2

VCB = -100 V IE = 0

BD650

-0.2

ICBO

Collector cut-off

current

VCB = -120 V

VCB = -40 V

IE = 0

IE = 0

TC = 150°C

BD652

BD646

-0.2

-2.0

VCB = -50 V IE = 0

TC = 150°C

BD648

-2.0

VCB = -60 V IE = 0

TC = 150°C

BD650

-2.0

VCB = -70 V IE = 0

TC = 150°C

BD652

-2.0

Emitter cut-off

IEBO current

VEB = -5 V IC = 0

(see Notes 5 and 6)

-5

Forward current

hFE

transfer ratio

VCE = -3 V IC = -3 A

(see Notes 5 and 6)

750

Collector-emitter

VCE(sat) saturation voltage

IB = -12 mA

IB = -50 mA

IC = -3 A

IC = -5 A

(see Notes 5 and 6)

-2

-2.5

Base-emitter

VBE(sat) saturation voltage

IB = -50 mA IC = -5 A

(see Notes 5 and 6)

-3

Base-emitter

VBE(on) voltage

VCE = -3 V IC = -3 A

(see Notes 5 and 6)

-2.5

NOTES: 5. These parameters must be measured using pulse techniques, tp = 300 µs, duty cycle ≤ 2%.

6. These parameters must be measured using voltage-sensing contacts, separate from the current carrying contacts.

UNIT

V

mA

mA

mA

V

V

V

thermal characteristics

RθJC

RθJA

PARAMETER

Junction to case thermal resistance

Junction to free air thermal resistance

MIN TYP MAX UNIT

2.0 °C/W

62.5 °C/W

PRODUCT INFORMATION

2

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