BD540 데이터 시트보기 (PDF) - Power Innovations Ltd
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BD540 Datasheet PDF : 6 Pages
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BD540, BD540A, BD540B, BD540C
PNP SILICON POWER TRANSISTORS
JUNE 1973 - REVISED MARCH 1997
electrical characteristics at 25°C case temperature
PARAMETER
TEST CONDITIONS
MIN TYP MAX
Collector-emitter
V(BR)CEO breakdown voltage
Collector-emitter
ICES cut-off current
ICEO
IEBO
hFE
Collector cut-off
current
Emitter cut-off
current
Forward current
transfer ratio
Collector-emitter
VCE(sat) saturation voltage
Base-emitter
VBE
voltage
Small signal forward
hfe
current transfer ratio
|hfe|
Small signal forward
current transfer ratio
IC = -30 mA
(see Note 4)
VCE = -40 V
VCE = -60 V
VCE = -80 V
VCE = -100 V
VCE = -30 V
VCE = -60 V
VEB = -5 V
VCE = -4 V
VCE = -4 V
VCE = -4 V
IB = -125 mA
IB = -375 mA
IB = -1 A
VCE = -4 V
VCE = -10 V
VCE = -10 V
IB = 0
VBE = 0
VBE = 0
VBE = 0
VBE = 0
IB = 0
IB = 0
IC = 0
IC = -0.5 A
IC = -1 A
IC = -3 A
IC = -1 A
IC = -3 A
IC = -5 A
IC = -3 A
IC = -0.5 A
IC = -0.5 A
BD540
BD540A
BD540B
BD540C
BD540
BD540A
BD540B
BD540C
BD540/540A
BD540B/540C
-40
-60
-80
-100
40
(see Notes 4 and 5)
30
12
(see Notes 4 and 5)
(see Notes 4 and 5)
f = 1 kHz
20
f = 1 MHz
3
-0.2
-0.2
-0.2
-0.2
-0.3
-0.3
-1
-0.25
-0.8
-1.5
-1.25
NOTES: 4. These parameters must be measured using pulse techniques, tp = 300 µs, duty cycle ≤ 2%.
5. These parameters must be measured using voltage-sensing contacts, separate from the current carrying contacts.
UNIT
V
mA
mA
mA
V
V
thermal characteristics
RθJC
RθJA
PARAMETER
Junction to case thermal resistance
Junction to free air thermal resistance
MIN TYP MAX UNIT
2.78 °C/W
62.5 °C/W
resistive-load-switching characteristics at 25°C case temperature
PARAMETER
TEST CONDITIONS †
ton
Turn-on time
toff
Turn-off time
IC = -1 A
VBE(off) = 4.3 V
IB(on) = -0.1 A
RL = 30 Ω
IB(off) = 0.1 A
tp = 20 µs, dc ≤ 2%
† Voltage and current values shown are nominal; exact values vary slightly with transistor parameters.
MIN TYP MAX UNIT
0.3
µs
1
µs
PRODUCT INFORMATION
2
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