BCX38B 데이터 시트보기 (PDF) - Diotec Semiconductor Germany

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BCX38B

Si-Epitaxial Planar Darlington-Transistors

Diotec Semiconductor Germany  

Characteristics (Tj = 25°C)

Thermal resistance junction to ambient air

Wärmewiderstand Sperrschicht – umgebende Luft

BCX38B

Kennwerte (Tj = 25°C)

RthA

< 200 K/W 1)

Pinning – Anschlußbelegung

T1

T2

E

B

C

T1

T2

Si-Epitaxial Planar Darlington-Transistors

Si-Epitaxial Planar Darlington-Transistoren

EBC

120

[%]

100

80

60

40

20

Ptot

0

0 TA 50

100

150 [°C]

Power dissipation versus ambient temperature 1)

Verlustleistung in Abh. von d. Umgebungstemp.1)

1 Valid, if leads are kept at ambient temperature at a distance of 2 mm from case

Gültig wenn die Anschlussdrähte in 2 mm Abstand vom Gehäuse auf Umgebungstemperatur gehalten werden

2

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