BC846W 데이터 시트보기 (PDF) - Galaxy Semi-Conductor
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BC846W Datasheet PDF : 5 Pages
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Production specification
NPN Silicon Epitaxial Planar Transistor
BC846W/BC847W/BC848W
ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified
Parameter
Symbol Test conditions
MIN TYP
Collector-base Breakdown
Voltage
Collector-emitter Breakdown
Voltage
Emitter-Base Breakdown
Voltage
V(BR)CBO
V(BR)CEO
V(BR)EBO
IC=10μA,IE=0
IC=10mA,IB=0
IE=1μA,IC=0
BC846W 80
BC847W 50
BC848W 30
BC846W 65
BC847W 45
BC848W 30
BC846W 6
BC847W 6
BC848W 5
MAX UNIT
V
V
V
Collector cut-off current
ICBO
VCB=30V,IE=0
15 nA
Emitter cut-off Current
IEBO
DC Current Gain
hFE
Collector-Emitter Saturation
Voltage
Base-emitter Saturation
Voltage
Base-emmitter Voltage
VCE(sat)
VBE(sat)
VBE
Transition Frequency
fT
VEB=5V,IC=0
100
VCE=5V,IC=10μA
BC846AW,BC847AW
140
BC846BW,BC847BW,BC848BW
250
BC847CW,BC848CW
480
VCE=5V,IC=2mA
BC846AW,BC847AW
110 180 220
BC846BW,BC847BW,BC848BW 200 290 450
BC847CW,BC848CW
420 520 800
IC=10mA, IB= 0.5mA
IC=100mA, IB= 5mA note1
IC=10mA, IB= 0.5mA
IC=100mA, IB= 5mA note1
90 250
200 600
700
900
IC=2mA,VCE=5V
IC=10mA,VCE=5V
580 660 700
770
VCE=5V,IC=10mA,f=100MHz
250
nA
mV
mV
mV
MHz
Collector-Base Capacitance Ccb
VCB=10V,IE=0,f=1MHz
2
3
pF
Emitter-Base Capacitance
Ceb
VEB=0.5V,IE=0,f=1MHz
10 15 pF
F045
Rev.A
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