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BC846(2005) 데이터 시트보기 (PDF) - Unisonic Technologies

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BC846
(Rev.:2005)
UTC
Unisonic Technologies UTC
BC846 Datasheet PDF : 4 Pages
1 2 3 4
BC846-BC850
TYPICAL CHARACTERISTICS
Static Characteristic
100
IB=400µA
80
IB=350µA
IB=300µA
60
IB=250µA
IB=200µA
40
IB=150µA
20
IB=100µA
0
IB=50µA
0 4 8 12 16 20
Collector-Emitter Voltage, VCE(V)
Base-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
10000
IC=10IB
1000
VBE(SAT)
100
VCE(sat)
10
1
10
100 1000
Collector Current, IC(mA)
Collector Output Capacitance
100
f=1MHz
10
1
0.1
1
10
100 1000
Collector-Base Voltage, VCB(V)
NPN SILICON TRANSISTOR
10000
DC Current Gain
1000
100
VCE=5V
10
1
10
100 1000
Collector Current, IC(mA)
Base-Emitter on Voltage
100
VCE=2V
10
1
0.1
0.1 0.2 0.4 0.6 0.8 1.0 1.2
Base-Emitter Voltage, VBE(V)
Current Gain Bandwidth Product
1000
V=5V
100
10
1
0.1
1
10
100
Collector Current, IC(mA)
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
3 of 4
QW-R206-027,C

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