BC817 데이터 시트보기 (PDF) - Diotec Semiconductor Germany
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BC817 Datasheet PDF : 2 Pages
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BC817 / BC818
Characteristics (Tj = 25°C)
Base-Emitter-voltage – Basis-Emitter-Spannung 2)
VCE = 1 V, IC = 500 mA
Collector-Base cutoff current – Kollektor-Basis-Reststrom
VCB = 20 V, (E open)
VCB = 20 V, Tj = 125°C, (E open)
Emitter-Base cutoff current – Emitter-Basis-Reststrom
VEB = 4 V, (C open)
Gain-Bandwidth Product – Transitfrequenz
VCE = 5 V, IC = 10 mA, f = 50 MHz
Collector-Base Capacitance – Kollektor-Basis-Kapazität
VCB = 10 V, IE =ie = 0, f = 1 MHz
Thermal resistance junction to ambient air
Wärmewiderstand Sperrschicht – umgebende Luft
Recommended complementary PNP transistors
Empfohlene komplementäre PNP-Transistoren
Marking of available current gain groups per type
Stempelung der lieferbaren Stromverstärkungsgruppen
pro Typ
Kennwerte (Tj = 25°C)
Min.
Typ.
Max.
VBE
–
–
1.2 V
ICB0
–
–
100 nA
ICB0
–
–
5 µA
IEB0
–
–
100 nA
fT
–
100 MHz
–
CCBO
–
12 pF
–
RthA
< 420 K/W 1)
BC807 / BC808
BC817-16 = 6A or 6CR BC818-16 = 6E or 6CR
BC817-25 = 6B or 6CS BC818-25 = 6F or 6CS
BC817-40 = 6C or 6CT BC818-40 = 6G or 6CT
120
[%]
100
80
60
40
20
Ptot
0
0 TA 50
100
150 [°C]
Power dissipation versus ambient temperature 1)
Verlustleistung in Abh. von d. Umgebungstemp.1)
2 Tested with pulses tp = 300 µs, duty cycle ≤ 2% – Gemessen mit Impulsen tp = 300 µs, Schaltverhältnis ≤ 2%
1 Mounted on P.C. board with 3 mm2 copper pad at each terminal
Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lötpad) an jedem Anschluss
2
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