BAY80(1999) 데이터 시트보기 (PDF) - Vishay Semiconductors
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BAY80 Datasheet PDF : 4 Pages
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Silicon Epitaxial Planar Diode
Applications
General purpose
BAY80
Vishay Telefunken
Absolute Maximum Ratings
Tj = 25_C
Parameter
Repetitive peak reverse voltage
Reverse voltage
Peak forward surge current
Repetitive peak forward current
Forward current
Average forward current
Junction temperature
Storage temperature range
Test Conditions
tp=1ms
94 9367
Type
Symbol Value
Unit
VRRM
150
V
VR
120
V
IFSM
1
A
IFRM
625
mA
IF
250
mA
IFAV
200
mA
Tj
175
°C
Tstg –65...+200 °C
Maximum Thermal Resistance
Tj = 25_C
Parameter
Junction ambient
Test Conditions
l=4mm, TL=constant
Symbol
Value
Unit
RthJA
350
K/W
Document Number 85553
Rev. 2, 01-Apr-99
www.vishay.de • FaxBack +1-408-970-5600
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