BAV170 데이터 시트보기 (PDF) - Infineon Technologies
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BAV170 Datasheet PDF : 6 Pages
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Silicon Low Leakage Diode Array
• Low-leakage applications
• Medium speed switching times
• Pb-free (RoHS compliant) package1)
• Qualified according AEC Q101
BAV170...
BAV170
!
,
,
Type
BAV170
Package
SOT23
Configuration
common cathode
Marking
JXs
Maximum Ratings at TA = 25°C, unless otherwise specified
Parameter
Symbol
Value
Unit
Diode reverse voltage
Peak reverse voltage
Forward current
VR
VRM
IF
80
V
85
200
mA
Non-repetitive peak surge forward current
t = 1 µs
IFSM
A
4.5
t=1s
0.5
Total power dissipation
TS ≤ 35°C
Junction temperature
Ptot
250
mW
Tj
150
°C
Storage temperature
Tstg
-65 ... 150
Thermal Resistance
Parameter
Junction - soldering point2)
BAV170
Symbol
RthJS
Value
Unit
≤ 460
K/W
1Pb-containing package may be available upon special request
2For calculation of RthJA please refer to Application Note Thermal Resistance
1
2007-04-19
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