MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
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by BAT54LT1/D
Schottky Barrier Diodes
These Schottky barrier diodes are designed for high speed switching applications,
circuit protection, and voltage clamping. Extremely low forward voltage reduces
conduction loss. Miniature surface mount package is excellent for hand held and
portable applications where space is limited.
• Extremely Fast Switching Speed
• Low Forward Voltage — 0.35 Volts (Typ) @ IF = 10 mAdc
3
CATHODE
1
ANODE
BAT54LT1
Motorola Preferred Device
30 VOLTS
SILICON HOT–CARRIER
DETECTOR AND SWITCHING
DIODES
MAXIMUM RATINGS (TJ = 125°C unless otherwise noted)
Rating
Symbol
Reverse Voltage
VR
Forward Power Dissipation
PF
@ TA = 25°C
Derate above 25°C
Forward Current (DC)
IF
Junction Temperature
TJ
Storage Temperature Range
Tstg
DEVICE MARKING
BAT54LT1 = LV3
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Reverse Breakdown Voltage (IR = 10 µA)
Total Capacitance (VR = 1.0 V, f = 1.0 MHz)
Reverse Leakage (VR = 25 V)
Forward Voltage (IF = 0.1 mAdc)
Forward Voltage (IF = 30 mAdc)
Forward Voltage (IF = 100 mAdc)
Reverse Recovery Time
(IF = IR = 10 mAdc, IR(REC) = 1.0 mAdc) Figure 1
V(BR)R
CT
IR
VF
VF
VF
trr
Forward Voltage (IF = 1.0 mAdc)
Forward Voltage (IF = 10 mAdc)
Forward Current (DC)
Repetitive Peak Forward Current
Non–Repetitive Peak Forward Current (t < 1.0 s)
VF
VF
IF
IFRM
IFSM
Thermal Clad is a registered trademark of the Bergquist Company.
Preferred devices are Motorola recommended choices for future use and best overall value.
REV 4
©MMoottoororloal,aInSc.m19a9l7l–Signal Transistors, FETs and Diodes Device Data
3
1
2
CASE 318 – 08, STYLE 8
SOT– 23 (TO – 236AB)
Value
30
200
2.0
200 Max
125 Max
– 55 to +150
Unit
Volts
mW
mW/°C
mA
°C
°C
Min
Typ
Max
Unit
30
—
—
Volts
—
7.6
10
pF
—
0.5
2.0
µAdc
—
0.22
0.24
Vdc
—
0.41
0.5
Vdc
—
0.52
1.0
Vdc
—
—
5.0
ns
—
0.29
0.32
Vdc
—
0.35
0.40
Vdc
—
—
200
mAdc
—
—
300
mAdc
—
—
600
mAdc
5–1