BAS70 데이터 시트보기 (PDF) - Galaxy Semi-Conductor

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BAS70

Surface mount schottky barrier diode

Galaxy Semi-Conductor 

BL Galaxy Electrical

Production specification

Surface mount schottky barrier diode

BAS70/-04/-05/-06

ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified

Characteristic

Reverse Breakdown Voltage

Forward Voltage

Reverse Leakage Current

Junction Capacitance

Reverse Recovery Time

Symbol Min

V(BR)R

70

VF

-

IR

-

Cj

-

trr

-

MAX

-

410

1000

100

2.0

5.0

UNIT

V

mV

nA

pF

ns

Test Condition

I(BR)= 10μA

tP<300μs,IF=1.0mA

tP<300μs,IF=15mA

tP<300μs,VR=50V

VR=0V,f=1.0MHz

IF=IR=10mA to

IR=1.0mA,RL=100Ω

TYPICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified

Document number: BL/SSSKC030

Rev.A

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