BAP63-03 데이터 시트보기 (PDF) - E-Tech Electronics LTD
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BAP63-03 Datasheet PDF : 2 Pages
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BAP63-03
ELECTRICAL CHARACTERISTICS T j = 25°C unless otherwise specified. (Continue)
SYMBOL
PARAMETER
CONDITIONS
TYP.
τL
charge carrier life time
when switched from I F =10 mA to
310
I R = 6 mA; R L = 100 Ω;
measured at I R =3 mA
LS
series inductance
1.5
Note
1. Guaranteed on AQL basis: inspection level S4, AQL 1.0.
MAX. UNIT
–
ns
–
nH
THERMAL CHARACTERISTICS
SYMBOL
Rth j-s
PARAMETER
thermal resistance from junction to soldering-point
VALUE
120
UNIT
K/W
10
f = 100 MHz; T =25°C
j
1
10 -1
10 -1
1
10
10 2
I F (mA )
Fig.1 Forward resistance as a function of
forward current; typical values.
0
(1) I F =100 mA.
(2) I =10 mA.
F
-0.1
(3) I F = 1 mA.
(4) I = 0.5 mA.
F
-0.2
-0.3
-0.4
Diode inserted in series with a 50 Ω stripline circuit and
biased via the analyzer Tee network.
Tamb =25°C.
-0.5
0
1
2
3
f (GHz )
Fig.3 Insertion loss ( |s 21| 2 )of the diode in on-state
as a function of frequency; typical values.
500
400
300
200
100
f = 1 MHz; T =25°C
j
0
0
4
8
12
VR(V)
16
20
Fig.2 Diode capacitance as a function of
reverse voltage; typical values.
0
- 10
- 20
- 30
- 40
0
Diode zero biased and inserted in
series with a 50 Ω stripline circuit.
Tamb =25°C.
1
2
3
f (GHz )
Fig.4 Isolation ( |s 21| 2 ) of the diode in off-state as a
function of frequency; typical values.
S25–2/2
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