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BAP51-02 데이터 시트보기 (PDF) - Shenzhen Jin Yu Semiconductor Co., Ltd.

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BAP51-02
HTSEMI
Shenzhen Jin Yu Semiconductor Co., Ltd.  HTSEMI
BAP51-02 Datasheet PDF : 2 Pages
1 2
GENERAL PURPOSE PIN DIODES
FEATURES
y Low diode capacitance
y
MARKING: A5
Low diode forward resistance
BAP51-02
62'
Maximum Ratings and Electrical Characteristics, Single Diode @TA=25
Parameter
Symbol
Limits
Continuous reverse voltage
Continuous Forward Current
Power Dissipation (TA=90)
Thermal Resistance from Junction to
soldering point
Junction temperature
Storage temperature
VR
IF
Pd
RθJS
Tj
TSTG
60
50
715
85
-65~+150
-65~+150
Unit
V
mA
mW
/W
Electrical Ratings @TA=25
Parameter
Continuous reverse voltage
Forward voltage
Reverse current
Diode capacitance
Diode forward resistance
Symbol
VR
VF
IR
Cd1
Cd2
Cd3
rD
rD
rD
Min.
50
Typ.
0.4*
Max. Unit
V
1.1
V
100 nA
pF
0.55 pF
0.35 pF
9
6.5
2.5
Conditions
IR=10μA
IF=50mA
VR=50V
VR=0V,f=1MHz
VR=1V,f=1MHz
VR=5V,f=1MHz
IF=0.5mA , f=100MHz;note1
IF=1mA , f=100MHz;note1
IF=10mA , f=100MHz;note1
Note 1. Guaranteed on AQL basis: inspection level S4,AQL 1.0.
1 
JinYu
semiconductor
www.htsemi.com
Date:2011/05

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