BAP51-02 데이터 시트보기 (PDF) - E-Tech Electronics LTD
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BAP51-02 Datasheet PDF : 2 Pages
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BAP51-02
10
f = 100 MHz; T =25°C
j
5
2
1
10 -1
1
10
I F (mA )
Fig.1 Forward resistance as a function of
forward current; typical values.
0
-0.5
(1) I F =10 mA.
(2) I = 1 mA.
F
-1
(3) I F = 0.5 mA.
-1.5
-2
Diode inserted in series with a 50 Ω stripline circuit and
biased via the analyzer Tee network.
Tamb =25°C.
-2.5
0.5
1
1.5
2
2.5
3
f (GHz )
Fig.3 Insertion loss ( |s 21| 2 ) of the diode in on-state
as a function of frequency; typical values.
500
400
300
200
100
0 f = 1 MHz; T j =25°C
0
4
8
12
16
20
VR(V)
Fig.2 Diode capacitance as a function of
reverse voltage; typical values.
0
-5
-10
-15
-20
-25
0.5
1
Diode zero biased and inserted in
series with a 50 Ω stripline circuit.
Tamb =25°C.
1.5
2
2.5
3
f (GHz )
Fig.4 Isolation ( |s 21| 2 ) of the diode in off-state as a
function of frequency; typical values.
S24–2/2
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