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전자부품 반도체 검색엔진( 무료 PDF 다운로드 ) - 데이터시트뱅크

AOT11N60 데이터 시트보기 (PDF) - Unspecified

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AOT11N60
SHENZHENFREESCALE
Unspecified SHENZHENFREESCALE
AOT11N60 Datasheet PDF : 6 Pages
1 2 3 4 5 6
AOT11N60/AOTF11N60
600V,11A N-Channel MOSFET
General Description
The AOT11N60 & AOTF11N60 have been fabricated using an advanced high voltage MOSFET process that is
designed to deliver high levels of performance and robustness in popular AC-DC applications.By providing
low RDS(on), Ciss and Crss along with guaranteed avalanche capability these parts can be adopted quickly into new
and existing offline power supply designs.
Features
VDS
ID (at VGS=10V)
RDS(ON) (at VGS=10V)
700V@150
11A
< 0.65
D
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain
TC=25°C
Current
TC=100°C
Pulsed Drain Current C
Avalanche Current C
Repetitive avalanche energy C
Single plused avalanche energy G
Peak diode recovery dv/dt
ID
IDM
IAR
EAR
EAS
dv/dt
TC=25°C
Power Dissipation B Derate above 25oC
PD
Junction and Storage Temperature Range
Maximum lead temperature for soldering
purpose, 1/8" from case for 5 seconds
Thermal Characteristics
TJ, TSTG
TL
Parameter
Maximum Junction-to-Ambient A,D
Maximum Case-to-sink A
Symbol
RθJA
RθCS
Maximum Junction-to-Case
RθJC
* Drain current limited by maximum junction temperature.
AOT11N60
11
8
272
2.2
AOT11N60
65
0.5
0.46
G
S
AOTF11N60
600
±30
11*
8*
39
4.8
345
690
5
50
0.4
-55 to 150
300
AOTF11N60
65
--
2.5
AOTF11N60L
11*
8*
37.9
0.3
AOTF11N60L
65
--
3.3
Units
V
V
A
A
mJ
mJ
V/ns
W
W/ oC
°C
°C
Units
°C/W
°C/W
°C/W
1/6
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