2SA733 데이터 시트보기 (PDF) - Unspecified
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2SA733 Datasheet PDF : 1 Pages
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A733
PNP Epitaxial Silicon Transistor
LOW FREQUENCY AMPLIFIER
Collector-Emitter Voltage: VCEO=-50V
Collector Dissipation: PC(max)=250mW
Absolute Maximum Ratings (TA=25oC)
Characteristic
Symbol Rating Unit
Collector-Base Voltage
VCBO
-60
V
Collector-Emitter Voltage
VCEO
-50
V
Emitter-Base Voltage
VEBO
-5
V
Collector Current
IC
-150
mA
Collector Dissipation
Junction Temperature
Storage Temperature
PC
TJ
TSTG
250
mW
150
oC
-55~+150 oC
Electrical Characteristics (TA=25oC)
Characteristic
Symbol
Test Conditions
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Transition Frequency
BVCBO
BVCEO
BVEBO
ICBO
IEBO
hFE
VCE(sat)
fT
IC= -5µA, IE=0
IC= -1mA, IB=0
IE= -50µA, IC=0
VCB= -60V, IE=0
VEB= -5V, IC=0
VCE= -6V, IC= -1mA
IC= -100mA, IB= -10mA
VCE= -6V, IC= -10mA
f= 30MHz
Min Typ Max Unit
-60
V
-50
V
-5
V
0.1
µA
01
µA
90
200
600
-0.18 -0.3
V
50
180
MHz
hFE CLASSIFICATION
Classification
R
hFE
90-180
Q
135-270
P
200-400
K
300-600
Elite Enterprises (H.K.) Co., Ltd.
Flat 2505, 25/F., Nanyang Plaza, 57 Hung To Road, Kwun Tong, H.K.
Tel: (852) 2723-3122 Fax: (852) 2723-3990 Email: info@elite-ent.com.hk
Part No.: A733
Page: 1 / 1
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