PJ13007
NPN Epitaxial Silicon Transistor
HIGH VOLTAGE SWITCH MODE APPLICATION
• High Speed Switching
• Suitable for Swiching Regulator and Motor Control
TO-220
ABSOLUTE MAXIMUM RATINGS (Ta= 25℃)
Characteristic
Symbol
Rating
Uint
Collector Base Voltage
VCBO
700
V
Collector Emitter
VCEO
400
V
Voltage
Emitter Base Voltage
VEBO
9
V
Collector Current (DC)
Ic
8
A
Collector Current
Ic
16
A
(Pulse)
Base Current
IB
4
A
Collector Dissipation
Pc
80
W
Junction Temperature
Tj
150
℃
Storage Temperature
T stg
-65 ~150
℃
ELECTRICAL CHARACTERISTICS(Ta= 25℃)
P in : 1. Base
2. Collector
3. Emitter
ORDERING INFORMATION
Device Operating Temperature
PJ13007CZ
-20℃~+85℃
Package
T O-220
Characteristic
*Collector Emitter Sustaining Voltage
Emitter Cutoff Current
*DC Current Gain
*Collector Emitter Saturation Voltage
*Base Emitter Saturation Voltage
Output Capacitance
Current Gain Bandwidth Product
Turn On Time
Storage Time
Fall Time
Symbol
VCEO(SUS)
IEBO
hFE
VCE (sat)
VBE (sat)
COB
fT
t on
ts
tf
Test Condition
Ic = 10mA, IB = 0
VEB =9V, Ic=0
VCE =5V, Ic =2A
VCE =5V, Ic =5A
Ic =2A, IB =0.4A
Ic =5A, IB =1A
Ic =8A, IB =2A
Ic =2A, IB =0.4A
Ic =5A, IB =1A
VCB =10V, f =0.1MHz
VCE =10V, Ic =0.5A
VCC =125V, Ic =5A
IB1 =IB2 =1A
Pulse Test: PW≤300 μS, Duty Cycle ≤2 %
Min Typ Max Unit
400
V
1 mA
8
60
5
30
1
V
2
V
3
V
1.2 V
1.6 V
110
pF
4
MHz
1.6 μS
3 μS
0.7 μS
1-2
2002/01.rev.A