2SD965A 데이터 시트보기 (PDF) - Unisonic Technologies
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2SD965A Datasheet PDF : 4 Pages
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2SD965/A
TYPICAL CHARACTERISTICS
Static Characteristics
3.0
IB=3.0mA
2.5
IB=2.5mA
IB=2.0mA
2.0
IB=1.5mA
1.5
IB=1.0mA
IB=0.5mA
1.0
0 0 0.4 0.8 1.2 1.6 2.0
Collector-Emitter Voltage ( V)
Base-Emitter on Voltage
6 VCE=2V
25℃
5
Ta=75℃ -25℃
4
3
2
1
0
0 0.4 0.8 1.2 1.6 2.0
Base to Emitter Voltage, VBE (V)
Current Gain-Bandwidth Product
103
VCE=6V
102
101
100
100
101
102
103
Collector Current, IC (mA)
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
NPN SILICON TRANSISTOR
DC Current Gain
103
102
VCE=2V
101
100
10-1
101
102
103
104
Collector Current, IC (mA)
Saturation Voltage
104
IC=30·IB
103
VBE(SAT)
VCE(SAT)
102
101
100
101
102
103
104
Collector Current, IC (mA)
Collector Output Capacitance
103
f=1MHz
IE=0
102
101
100
10-1
100
101
102
Collector-Base Voltage (V)
3 of 4
QW-R209-007,B
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