D2256 데이터 시트보기 (PDF) - Inchange Semiconductor

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D2256

Silicon NPN Darlington Power Transistor

Inchange Semiconductor 

INCHANGE Semiconductor

isc Silicon NPN Darlington Power Transistor

isc Product Specification

2SD2256

DESCRIPTION

·High DC Current Gain

: hFE= 2000(Min.)@ IC= 12A, VCE= 4V

·High Collector-Emitter Breakdown Voltage-

: V(BR)CEO = 120V(Min)

APPLICATIONS

·Designed for low frequency power amplifier applications.

ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

SYMBOL

PARAMETER

VALUE UNIT

VCBO Collector-Base Voltage

120

V

VCEO Collector-Emitter Voltage

120

V

VEBO Emitter-Base Voltage

7

V

IC

Collector Current-Continuous

25

A

ICM

Collector Current-Peak

PC

Collector Power Dissipation

@TC=25℃

Tj

Junction Temperature

Tstg

Storage Temperature Range

35

A

120

W

150

℃

-55~150 ℃

isc Website：www.iscsemi.cn

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