2SD1616A 데이터 시트보기 (PDF) - Micro Electronics
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2SD1616A Datasheet PDF : 1 Pages
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MICRO 2SD1616A
NPN
SILICON
TRANSISTOR
DESCRIPTION
2SD1616A is NPN silicon planar
transistor designed for use in driver and
output stages of AF amplifier, general
purpose application.
ABSOLUTE MAXIMUM RATINGS
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current Continuous
Total Power Dissipation @ Ta=25oC
Operating & Storage Junction Temperature
4.6
(0.18)
12.7
(0.5)
min.
4.68
(0.18)
TO-92B
3.58
(0.14) B C E
0.4
(0.016)
10
2.54
0.51
(0.1)
(0.02) Bottom view
Unit: mm(inch)
0.45
(0.018)
VCEO
VCBO
VEBO
IC
Ptot
Tj,Tstg
60V
120V
6V
1A
0.65W
-55 to +150oC
ELECTRICAL CHARACTERISTICS (Ta=25oC)
PARAMETER
SYMBOL MIN
Collector Cutoff Current
ICBO
Emitter Cutoff Current
IEBO
D.C. Current Gain
HFE * 170
D.C. Current Gain
HFE *
45
Base-Emitter Voltage
VBE * 600
Collector-Emitter Saturation Voltage VCE(sat) *
Base-Emitter Saturation Voltage
VBE(sat) *
Output Capacitance
Cob
19
Gain Bandwidth Product
fT
100
Turn-On Time
ton
0.07
Storage Time
tstg
0.95
Fall Time
tf
0.07
* Pulse test PW ≦ 350µs, duty cycle ≦ 2%.
MAX
100
100
350
700
0.5
1.2
TYP.
TYP.
TYP.
TYP.
UNIT
CONDITIONS
nA VCB=60V IE=0
nA VEB=6V IC=0
VCE=2V IC=100mA
VCE=2V IC=1A
mV VCE=2V IC=50mA
V IC=1A
IB=50mA
V IC=1A
IB=50mA
pF VCB=10V IE=0
MHz VCE=2V IC=100mA
µs Vcc=10V IC=100mA
µs IB1=-IB2=10mA
µs VBE(off)=-2 to 3V
MICRO ELECTRONICS LTD.
G/F, 38 Hung To Road, Kwun Tong, Kowloon, Hong Kong.
Kwun Tong P.O. BOX 69477, Hong Kong. TEL: (852) 23430181 FAX: (852) 23410321
HOMEPAGE: http://www.microelectr.com.hk E-MAIL ADDRESS: common@microelectr.com.hk
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