2SD1611(2001) 데이터 시트보기 (PDF) - Panasonic Corporation
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2SD1611 Datasheet PDF : 3 Pages
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Power Transistors
2SD1611
Silicon NPN triple diffusion planar type Darlington
For power amplification
8.5±0.2
6.0±0.5
Unit: mm
3.4±0.3
1.0±0.1
s Features
q High foward current transfer ratio hFE
q High collector to base voltage VCBO
q N type package enabling direct soldering of the radiating fin to
the printed circuit board, etc. of small electronic equipment.
s Absolute Maximum Ratings (TC=25˚C)
Parameter
Symbol
Ratings
Unit
Collector to base voltage
VCBO
500
V
Collector to emitter voltage VCEO
400
V
Emitter to base voltage
VEBO
5
V
Peak collector current
ICP
10
A
Collector current
IC
6
A
Collector power TC=25°C
dissipation
Ta=25°C
PC
40
W
1.3
Junction temperature
Storage temperature
Tj
150
˚C
Tstg
–55 to +150
˚C
s Electrical Characteristics (TC=25˚C)
Parameter
Symbol
Conditions
Collector cutoff current
Collector to emitter voltage
Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
ICBO
VCEO(sus)
VEBO
hFE
VCE(sat)
VBE(sat)
fT
VCB = 350V, IE = 0
IC = 2A, L = 10mH
IE = 0.1A, IC = 0
VCE = 2V, IC = 2A
IC = 3A, IB = 0.06A
IC = 3A, IB = 0.06A
VCE = 10V, IC = 1A, f = 1MHz
1.5max.
0.8±0.1
2.54±0.3
5.08±0.5
123
8.5±0.2
6.0±0.3
1.1max.
0.5max.
1:Base
2:Collector
3:Emitter
N Type Package
Unit: mm
3.4±0.3
1.0±0.1
0.8±0.1
2.54±0.3
5.08±0.5
R0.5
R0.5
1.1 max.
0 to 0.4
123
1:Base
2:Collector
3:Emitter
N Type Package (DS)
min
typ
max Unit
100
µA
400
V
5
V
500
1.5
V
2.5
V
15
MHz
Internal Connection
C
B
E
1
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