2SC4706 데이터 시트보기 (PDF) - Quanzhou Jinmei Electronic

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2SC4706

Silicon NPN Power Transistor

Quanzhou Jinmei Electronic 

JMnic

Silicon NPN Power Transistors

CHARACTERISTICS

Tj=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

V(BR)CEO Collector-emitter breakdown voltage IC=10mA ; IB=0

ICBO

Collector cut-off current

VCB=800V; IE=0

IEBO

Emitter cut-off current

VEB=7V; IC=0

hFE

DC current gain

IC=7A ; VCE=4V

VCE(sat) Collector-emitter saturation voltage IC=7A ; IB=1.4A

VBE(sat) Base-emitter saturation voltage

fT

Transition frequency

COB

Collector output capacitance

Switching times

IC=7A ; IB=1.4A

VCE=12V;IE=-1.5A

VCB=10V;f=1MHz

ton

Turn-on time

ts

Storage time

tf

Fall time

IC=7A;RL=35.7Ω

IB1=1.05A;IB2=-3.5A

VCC=250V

Product Specification

2SC4706

MIN TYP. MAX UNIT

600

V

0.1 mA

0.1 mA

10

25

0.5

V

1.2

V

6

MHz

160

pF

1.0 μs

5.0 μs

0.7 μs

2

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