C4260 데이터 시트보기 (PDF) - Renesas Electronics

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C4260

Silicon NPN Epitaxial

Renesas Electronics 

2SC4260

Electrical Characteristics

Item

Collector to base breakdown voltage

Collector cutoff current

Emitter cutoff current

Collector to emitter saturation voltage

DC current transfer ratio

Collector output capacitance

Gain bandwidth product

Conversion gain

Noise figure

(Ta = 25°C)

Symbol Min Typ Max Unit

Test conditions

V(BR)CBO

25

—

—

V IC = 10 µA, IE = 0

ICBO

—

—

0.1

µA VCB = 15 V, IE = 0

ICEO

—

—

10

µA VCE = 13 V, RBE = ∞

IEBO

—

—

0.3

µA VEB = 3 V, IC = 0

VCE(sat)

—

—

0.3

V IC = 20 mA, IB = 4 mA

hFE

50

—

180

VCE = 5 V, IC = 5 mA

Cob

—

0.85 1.3

pF VCB = 10 V, IE = 0, f = 1MHz

fT

3.0

3.8

—

GHz VCE = 5 V, IC = 5 mA

CG

—

19

—

dB VCC = 5 V, IC = 0.8 mA,

f = 900 MHz

NF

—

8

—

dB fOSC = 930 MHz (–5dBm),

fout = 30 MHz

Rev.3.00 Aug 10, 2005 page 2 of 4

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