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C4260

Silicon NPN RF Transistor

Inchange Semiconductor 

INCHANGE Semiconductor

isc Silicon NPN RF Transistor

isc RF Product Specification

2SC4260

ELECTRICAL CHARACTERISTICS

TC=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

MIN TYP. MAX UNIT

V(BR)CBO Collector-Base Breakdown Voltage IC= 10μA ; IE= 0

ICBO

Collector Cutoff Current

VCB= 15V; IE= 0

25

V

0.1 μA

ICEO

Collector Cutoff Current

VCE= 13V; RBE= ∞

10 μA

IEBO

Emitter Cutoff Current

VEB= 3V; IC= 0

0.3 μA

VCE(sat) Collector-Emitter Saturation Voltage IC= 20mA ; IB= 4mA

0.3

V

hFE

DC Current Gain

IC= 5mA ; VCE= 5V

50

180

fT

Current-Gain—Bandwidth Product IC= 5mA ; VCE= 5V

3.0 3.8

GHz

COB

Output Capacitance

CG

Conversion Gain

NF

Noise Figure

IE= 0 ; VCB= 10V;f= 1.0MHz

IC= 0.8mA ; VCC= 5V;f= 900MHz

fOSC= 930MHz (-5dBm),

fout= 30MHz

IC= 0.8mA ; VCC= 5V;f= 900MHz

fOSC= 930MHz (-5dBm),

fout= 30MHz

0.85 1.3 pF

19

dB

8

dB

isc Website：www.iscsemi.cn

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