2SC2001 데이터 시트보기 (PDF) - DC COMPONENTS
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2SC2001 Datasheet PDF : 1 Pages
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DC COMPONENTS CO., LTD.
R
DISCRETE SEMICONDUCTORS
2SC2001
TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR
Description
Designed for general purpose applications.
Pinning
1 = Emitter
2 = Collector
3 = Base
Absolute Maximum Ratings(TA=25oC)
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Total Power Dissipation
Junction Temperature
Storage Temperature
Symbol
VCBO
VCEO
VEBO
IC
PD
TJ
TSTG
Rating Unit
30
V
25
V
5
V
700
mA
600
mW
+150
oC
-55 to +150 oC
TO-92
.190(4.83)
.170(4.33)
.190(4.83)
.170(4.33)
.500
(12.70)
Min
2o Typ
2o Typ
.050
(1.27)Typ
.022(0.56)
.014(0.36)
.100
(2.54)
Typ
.022(0.56)
.014(0.36)
321
.148(3.76)
.132(3.36)
.050
5oTyp. 5oTyp. (1.27)Typ
Dimensions in inches and (millimeters)
Electrical Characteristics
(Ratings at 25oC ambient temperature unless otherwise specified)
Characteristic
Symbol Min
Typ
Max
Collector-Base Breakdown Volatge
BVCBO
30
-
-
Collector-Emitter Breakdown Voltage
BVCEO
25
-
-
Emitter-Base Breakdown Volatge
BVEBO
5
-
-
Collector Cutoff Current
ICBO
-
-
0.1
Emitter Cutoff Current
IEBO
-
Collector-Emitter Saturation Voltage(1)
VCE(sat)
-
Base-Emitter Saturation Voltage(1)
VBE(sat)
-
-
0.1
-
0.6
-
1.2
DC Current Gain(1)
hFE1
90
hFE2
50
-
400
-
-
Transition Frequency
fT
50
-
-
Output Capacitance
Cob
-
(1)Pulse Test: Pulse Width 380µs, Duty Cycle 2%
-
25
Unit
V
V
V
µA
µA
V
V
-
-
MHz
pF
Test Conditions
IC=100µA, IE=0
IC=2mA, IB=0
IE=100µA, IC=0
VCB=30V, IE=0
VEB=5V, IC=0
IC=700mA, IB=70mA
IC=700mA, IB=70mA
IC=100mA, VCE=1V
IC=700mA, VCE=1V
IC=10mA, VCE=6V
VCB=6V, f=1MHz, IE=0
Classification of hFE1
Rank
M
L
Range
90~180
135~270
K
200~400
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