C1213 데이터 시트보기 (PDF) - DC COMPONENTS
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C1213 Datasheet PDF : 1 Pages
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DC COMPONENTS CO., LTD.
R
DISCRETE SEMICONDUCTORS
2SC1213
TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR
Description
Designed for low frequency amplifier applications.
Pinning
1 = Emitter
2 = Collector
3 = Base
Absolute Maximum Ratings(TA=25oC)
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Total Power Dissipation
Junction Temperature
Storage Temperature
Symbol
VCBO
VCEO
VEBO
IC
PD
TJ
TSTG
Rating Unit
50
V
50
V
4
V
500
mA
400
mW
+150
oC
-55 to +150 oC
TO-92
.190(4.83)
.170(4.33)
.190(4.83)
.170(4.33)
.500
(12.70)
Min
2o Typ
2o Typ
.050
(1.27)Typ
.022(0.56)
.014(0.36)
.100
(2.54)
Typ
.022(0.56)
.014(0.36)
321
.148(3.76)
.132(3.36)
.050
5oTyp. 5oTyp. (1.27)Typ
Dimensions in inches and (millimeters)
Electrical Characteristics
(Ratings at 25oC ambient temperature unless otherwise specified)
Characteristic
Symbol Min
Typ
Max
Collector-Base Breakdown Volatge
BVCBO
50
-
-
Collector-Emitter Breakdown Voltage
BVCEO
50
-
-
Emitter-Base Breakdown Volatge
BVEBO
4
-
-
Collector Cutoff Current
ICBO
-
-
0.5
Emitter Cutoff Current
IEBO
-
Collector-Emitter Saturation Voltage(1)
VCE(sat)
-
Base-Emitter Saturation Voltage(1)
VBE(sat)
-
-
0.5
-
0.6
-
1.2
DC Current Gain(1)
hFE1
60
hFE2
35
-
320
-
-
Transition Frequency
fT
100
160
-
(1)Pulse Test: Pulse Width 380µs, Duty Cycle 2%
Unit
V
V
V
µA
µA
V
V
-
-
MHz
Test Conditions
IC=100µA, IE=0
IC=1mA, IB=0
IE=10µA, IC=0
VCB=20V, IE=0
VEB=5V, IC=0
IC=150mA, IB=15mA
IC=150mA, IB=15mA
IC=10mA, VCE=3V
IC=500mA, VCE=3V
IC=20mA, VCE=6V
Classification of hFE1
Rank
B
C
Range
60~120
100~200
D
160~320
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