2SB709A 데이터 시트보기 (PDF) - Rectron Semiconductor
부품명
상세내역
일치하는 목록
2SB709A Datasheet PDF : 5 Pages
| |||
RECTRON
SEMICONDUCTOR
TECHNICAL SPECIFICATION
SOT-23 BIPOLAR TRANSISTORS
TRANSISTOR(PNP)
FEATURES
* Power dissipation
PCM :
0.2
W(Tamb=25OC)
2SB709A
MECHANICAL DATA
* Case: Molded plastic
* Epoxy: UL 94V-O rate flame retardant
* Lead: MIL-STD-202E method 208C guaranteed
* Mounting position: Any
* Weight: 0.008 gram
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25OC ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load ,derate current by 20%.
MAXIMUM RATINGS ( @ TA = 25oC unless otherwise noted )
CHARACTERISTICS
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current-continuous
SYMBOL
VCBO
VCEO
VEBO
IC
Junction and Storage temperature
TJ,Tstg
ELECTRICAL CHARACTERISTICS ( @ TA = 25oC unless otherwise noted )
CHARACTERISTICS
Collector-base breakdown voltage (IC= -10mA, IE=0)
Collector-emitter breakdown voltage (IC= -2mA, IB=0)
Emitter-base breakdown voltage (IE= -10mA, IC=0)
Collector cut-off current (VCB= -20V, IE=0)
Emitter cut-off current (VCE= -10V, IB=0)
DC current gain (VCE= -10V, IC= -2mA)
Collector-emitter saturation voltage (IC= -100mA, IB= -10mA)
Transition frequency (VCE= -10V, IC= -1mA, f= 200MHZ)
Collector output capacitance (VCB= -10V, IE= 0, f= 1MHz)
CLASSIFICATION OF hFE
RANK
SYMBOL
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
ICEO
hFE
VCE(sat)
fT
Cob
Q
Range
160-260
Marking
BQ1
SOT-23
COLLECTOR
3
BASE 1
2
EMITTER
0.006(0.15)
0.003(0.08)
0.055(1.40)
0.047(1.20)
0.020(0.50)
0.012(0.30)
0.043(1.10)
0.035(0.90)
0.004(0.10)
0.000(0.00)
0.020(0.50)
0.012(0.30)
0.100(2.55)
0.089(2.25)
1
0.019(2.00)
0.071(1.80)
3
2
0.118(3.00)
0.110(2.80)
Dimensions in inches and (millimeters)
VALUE
-45
-45
-7
-200
-55-150
MIN
-45
-45
-7
-
-
160
-
60
-
R
210-340
BR1
UNITS
V
V
V
mA
OC
MAX
-
-
-
-0.1
-100
460
-0.5
-
2.7
UNITS
V
V
V
mA
mA
-
V
MHz
PF
S
290-460
BS1
2006-3
Share Link: 