2SB1260 데이터 시트보기 (PDF) - Willas Electronic Corp.

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2SB1260

TRANSISTOR (PNP)

Willas Electronic Corp. 

RoHS

2SB1260

WEJ ELECTRONIC CO.,LTD 2SB1260 TRANSISTOR(PNP)

FEATURES

Power dissipation

PCM:

0.5

Collector current

ICM:

-1

Collector-base voltage

V(BR)CBO:

-80

W (Tamb=25℃)

A

V

Operating and storage junction temperature range

TJ, Tstg: -55℃ to +150℃

SOT-89

1. BASE

2. COLLECTOR 1

3. EMITTER

2

3

ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)

Parameter

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cut-off current

Emitter cut-off current

Symbol

V(BR)CBO

V(BR)CEO

V(BR)EBO

ICBO

IEBO

Test conditions

Ic=-50µA , IE=0

IC= -1mA , IB=0

IE=-50µA, IC=0

VCB=-60 V , IE=0

VEB=-4 V , IC=0

MIN MAX UNIT

-80

V

-80

V

-5

V

-1

µA

-1

µA

DC current gain

Collector-emitter saturation voltage

Transition frequency

hFE

VCE=-3V, IC= -0.1A

82

VCE(sat) IC=-500 mA, IB= -50mA

VCE= -5V, IC=- 50mA

fT

80

f = 30MHz

390

-0.4

V

MHz

CLASSIFICATION OF hFE

Rank

Range

P

82-180

Q

120-270

R

180-390

Marking

ZL

WEJ ELECTRONIC CO. Http:// www.wej.cn E-mail:wej@yongerjia.com

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