2N6193 데이터 시트보기 (PDF) - Microsemi Corporation

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2N6193

PNP MEDIUM POWER SILICON TRANSISTOR

Microsemi Corporation 

2N6193 JAN SERIES

ELECTRICAL CHARACTERISTICS (con’t)

Characteristics

ON CHARACTERISTICS (3)

DC Current Gain

IC = 0.5 Adc, VCE = 2.0 Vdc

IC = 2.0 Adc, VCE = 2.0 Vdc

IC = 5.0 Adc, VCE = 2.0 Vdc

Collector-Emitter Saturation Voltage

IC = 2.0 Adc, IB = 0.2 Adc

IC = 5.0 Adc, IB = 0.5 Adc

Base-Emitter Saturation Voltage

IC = 2.0 Adc, IB = 0.2 Adc

IC = 5.0 Adc, IB = 0.5 Adc

DYNAMIC CHARACTERISTICS

Magnitude of Common Emitter Small-Signal Short Circuit

Forward-Current Transfer Ratio

IC = 0.5 Adc, VCE = 10 Vdc, f = 10 MHz

Output Capacitance

VCB = 10 Vdc, IE = 0, 100 kHz ≤ f ≤ 1.0 MHz

Output Capacitance

VBE = 2.0 Vdc, IC = 0, 100 kHz ≤ f ≤ 1.0 MHz

SWITCHING CHARACTERISTICS

Delay Time

Rise Time

Storage Time

Fall Time

VCC = -40 Vdc, VBE(off) = 3.0 Vdc

IC = 2.0 Adc, IB1= 0.2 Adc

VCC = -40 Vdc IC = 2.0 Adc,

IB1 = -IB2 = 0.2 Adc

SAFE OPERATING AREA

DC Tests

TC = +250C, 1 Cycle, t ≥ 0.5 s

Test 1

VCE = 2.0 Vdc, IC = 5.0 Adc

Test 2

VCE = 90 Vdc, IC = 55 mAdc

(3) Pulse Test: Pulse Width = 300µs, Duty Cycle ≤ 2.0%.

Symbol

hFE

VCE(sat)

VBE(sat)

hfe

Cobo

Cibo

td

tr

ts

tf

Min. Max. Unit

60

60

240

40

0.7

Vdc

1.2

1.2

Vdc

1.8

3.0

15

300

pF

1250

pF

100

ηs

100

ηs

2.0

µs

200

ηs

6 Lake Street, Lawrence, MA 01841

1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803

120101

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