2N4429 데이터 시트보기 (PDF) - Advanced Semiconductor
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2N4429 Datasheet PDF : 1 Pages
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2N4429
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The ASI 2N4429 is Designed for
Class C Amplifier Applications Up to
1,000 MHz.
FEATURES:
• PG = 7.5 dB Typ. at 1.0 W/1000 MHz
• Emitter Ballasting for Ruggedness
• Omnigold™ Metallization System
MAXIMUM RATINGS
IC
1.0 A
VCB
PDISS
TJ
TSTG
θJC
45 V
7.0 W @ TC = 25 OC
-65 to +200 OC
-65 to +150 OC
25 OC/W
PACKAGE STYLE .280 4L STUD
A
45°
B
D
C
J
E
I
F
G
H
K
#8-32 UNC
DIM
MINIMUM
inches / mm
MAXIMUM
inches / mm
A
1.010 / 25.65
1.055 / 26.80
B
.220 / 5.59
.230 /5.84
C
.270 / 6.86
.285 / 7.24
D
.003 / 0.08
.007 / 0.18
E
.117 / 2.97
.137 / 3.48
F
.572 / 14.53
G
.130 / 3.30
H
.245 / 6.22
.255 / 6.48
I
.640 / 16.26
J
.175 / 4.45
.217 / 5.51
K
.275 / 6.99
.285 / 7.24
ORDER CODE: ASI10900
CHARACTERISTICS TC = 25 OC
SYMBOL
TEST CONDITIONS
BVCBO
IC = 1 mA
BVCER
IC = 20 mA
RBE = 10 Ω
BVEBO
IE = 1 mA
ICBO
VCE = 28 V
hFE
VCE = 5.0 V
IC = 100 mA
NONE
MINIMUM TYPICAL MAXIMUM
45
45
3.5
250
15
150
UNITS
V
V
V
µA
---
Ft
VCE = 20 V
IC = 100 mA
Cob
VCB = 28 V
600
f = 1.0 MHz
MHz
5.0
pF
PG
ηC
VCE = 28 V
POUT = 5.0 W
6.5
f = 1,000 MHz
40
7.5
50
dB
%
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004
Specifications are subject to change without notice.
REV. A
1/1
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